Development of Large Diameter Silicon Carbide Substrate and Epitaxial Processes
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Development of Large Diameter Silicon Carbide Substrate and Epitaxial Processes: This is a sources-sought synopsis in the area of:
Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are rapidly becoming the technology of choice for high power RF applications. GaN RF devices are
dependent upon the use of high quality, semi-insulating SiC substrates. The
combination of high voltage and current handling as well as switching frequency
capabilities make SiC based power devices a viable alternative to silicon technology.
Fabrication of SiC power devices requires homo-epitaxial growth of precisely doped SiC
layers ranging in thickness from a few microns to > 100 μm depending upon the voltage
requirements. Critical to the realization is the availability of affordable, high quality, large
diameter SiC substrates and epitaxy from a pure play supplier. The Air Force Research
Laboratory (AFRL) is interested in advancing the current technological state-of-the-art
with respect to SiC growth and fabrication.
Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are rapidly becoming the technology of choice for high power RF applications. GaN RF devices are
dependent upon the use of high quality, semi-insulating SiC substrates. The
combination of high voltage and current handling as well as switching frequency
capabilities make SiC based power devices a viable alternative to silicon technology.
Fabrication of SiC power devices requires homo-epitaxial growth of precisely doped SiC
layers ranging in thickness from a few microns to > 100 μm depending upon the voltage
requirements. Critical to the realization is the availability of affordable, high quality, large
diameter SiC substrates and epitaxy from a pure play supplier. The Air Force Research
Laboratory (AFRL) is interested in advancing the current technological state-of-the-art
with respect to SiC growth and fabrication.
Federal Grant Title: | Development of Large Diameter Silicon Carbide Substrate and Epitaxial Processes |
Federal Agency Name: | Air Force Research Lab |
Grant Categories: | Science and Technology |
Type of Opportunity: | Discretionary |
Funding Opportunity Number: | RFI-AFRL-RQKS-2016-0002 |
Type of Funding: | Cooperative Agreement |
CFDA Numbers: | 319904 |
CFDA Descriptions: | Air Force Defense Research Sciences Program |
Current Application Deadline: | Apr 18, 2016 |
Original Application Deadline: | Apr 18, 2016 |
Posted Date: | Mar 18, 2016 |
Creation Date: | Mar 18, 2016 |
Archive Date: | May 18, 2016 |
Total Program Funding: | $13,500,000 |
Maximum Federal Grant Award: | $13,500,000 |
Minimum Federal Grant Award: | none |
Expected Number of Awards: | 1 |
Cost Sharing or Matching: | Yes |
- Applicants Eligible for this Grant
- Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled "Additional Information on Eligibility"
- Grant Announcement Contact
- Jo Ann Sillaman
Grants Officer/Contracting Officer
Phone 937-713-9965
For Questions & Assistance
Air Force -- Research Lab 937-255-4758