Spin Torque Transfer-Random Access Memory (STT-RAM)

The summary for the Spin Torque Transfer-Random Access Memory (STT-RAM) grant is detailed below. This summary states who is eligible for the grant, how much grant money will be awarded, current and past deadlines, Catalog of Federal Domestic Assistance (CFDA) numbers, and a sampling of similar government grants. Verify the accuracy of the data FederalGrants.com provides by visiting the webpage noted in the Link to Full Announcement section or by contacting the appropriate person listed as the Grant Announcement Contact. If any section is incomplete, please visit the website for the DARPA Microsystems Technology Office, which is the U.S. government agency offering this grant.
Spin Torque Transfer-Random Access Memory (STT-RAM): DARPA is soliciting innovative research and development (R&D) proposals in the area of Spin-Torque Transfer Random Access Memory technologies. The goal of this program is to develop materials and processes to fully exploit the spin-torque transfer (STT) phenomenon for creating "universal" memory elements. A universal memory element is one that exhibits scalability for high capacity of storage per unit volume, as well as high read/write speed, compatibility with CMOS processes, and non-volatility. Proposed research should investigate innovative approaches that enable revolutionary advances in science, devices, or systems. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. Prior research in micro-magnetics and spintronics has led to the exploitation of giant magnetoresistance (GMR) effects for rotating magnetic disk drive memories, as well as magnetic tunneling junctions (MTJ) for magnetic random access memory (MRAM). The spin-torque transfer (STT) effect is a recent discovery that exploits magnetic spin states to electrically change the magnetic orientation of a material (Science 285, 867 (1999)). Components based on the STT effect can have the properties of a universal memory, high density, high speed, non-volatility, high endurance, and can also be well suited for harsh environments such as those with exposure to ionizing radiation. In addition, they can operate from a single power supply voltage level greatly simplifying associated circuitry.This program is aimed at developing the core technology for exploiting spin-torque transfer and related phenomena for producing large-scale memories. Compatibility and stability with expected mainstream processes for semiconductor electronics and patterned media is an important attribute that should enable significant leverage for these new technologies in delivering early demonstrations and in gaining wider acceptance.All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to [email protected] BAA attached.
Federal Grant Title: Spin Torque Transfer-Random Access Memory (STT-RAM)
Federal Agency Name: DARPA Microsystems Technology Office
Grant Categories: Science and Technology
Type of Opportunity: Discretionary
Funding Opportunity Number: BAA08-16
Type of Funding: Cooperative Agreement Grant Other Procurement Contract
CFDA Numbers: 12.910
CFDA Descriptions: Research and Technology Development
Current Application Deadline: Apr 11, 2008
Original Application Deadline: Apr 11, 2008
Posted Date: Feb 26, 2008
Creation Date: Jan 08, 2009
Archive Date: Jan 09, 2009
Total Program Funding:
Maximum Federal Grant Award: $0
Minimum Federal Grant Award: $0
Expected Number of Awards:
Cost Sharing or Matching: No
Applicants Eligible for this Grant
Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled "Additional Information on Eligibility"
Link to Full Grant Announcement
Information not provided
Grant Announcement Contact
Devanand Shenoy Program Manager DARPA/MTO
BAA email address [[email protected]]
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