Wide Band Gap Semiconductors for RF Applications (WBGS-RF)

The summary for the Wide Band Gap Semiconductors for RF Applications (WBGS-RF) grant is detailed below. This summary states who is eligible for the grant, how much grant money will be awarded, current and past deadlines, Catalog of Federal Domestic Assistance (CFDA) numbers, and a sampling of similar government grants. Verify the accuracy of the data FederalGrants.com provides by visiting the webpage noted in the Link to Full Announcement section or by contacting the appropriate person listed as the Grant Announcement Contact. If any section is incomplete, please visit the website for the Defense Advanced Research Projects Agency, which is the U.S. government agency offering this grant.
Wide Band Gap Semiconductors for RF Applications (WBGS-RF): DARPA is soliciting innovative research proposals for the development of wide bandgap semiconductor (WBGS) technology for RF applications. Proposed research should investigate innovative approaches that enable revolutionary advances in science, devices, or systems. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. The overall objective of this effort is to exploit the properties of wide band gap semiconductors to enhance the capabilities of microwave and millimeter-wave monolithic integrated circuits (MMICs) and, in turn, enable future RF sensor, communication, and multifunction military capabilities. Successful approaches will lead to affordable, high performance, wide band gap devices and MMICs with performance and reliability characteristics consistent with DoD system requirements. Phase I of the WBGS RF program focused upon the demonstration of innovative processes for fabricating several types of wide bandgap semiconductor materials including silicon carbide (SiC), gallium nitride (GaN), and nitride-based alloys such as indium aluminum gallium nitride (InAlGaN). This BAA solicits research proposals for Phase II: Device Technologies and Phase III: Circuit Technologies. These Phases will exploit the advances made in material related capabilities during Phase I. Each Phase will be of 24 months duration (a total of 48 months).Demonstrations that will validate that these objectives have been achieved will be a key aspect of the program. The program will consist of the following distinct Objective Demonstration Tracks:Track 1: X-band Transmit and Receive (T/R) ModuleTrack 2: Q-band High Power Amplifier ModuleTrack 3: Wideband High Power Amplifier ModuleAdditional information on these Objective Demonstration Tracks and their final Objective Demonstrations is provided in the BAA 04-19 Proposer Information Pamphlet referenced below.DARPA seeks innovative proposals in the following areas:I. WBG Materials Optimization: The objective of this task is to demonstrate the requisite improvements in the characteristics of WBG substrate and epitaxial materials and processes to enable the realization of high yields of high performance, reliable WBG devices that can be produced at an affordable cost. II. WBG Device Fabrication and Modeling: The objective of this task is to demonstrate WBG device structures with performance characteristics that consistently, repeatedly, and reliably exceed existing capabilities and which subsequently can be incorporated into high performance WBG microwave and/or millimeter-wave monolithic integrated circuits for use in achieving the goals of at least one Objective Demonstration Track. III. High Yield, Robust WBG MMICs: The objective of this task is to demonstrate and implement the capability to produce high performance, high reliability WBG MMICs at high yields and an affordable cost. The specific MMIC(s) developed should be targeted for use in meeting the requirements of an Objective Demonstration Track.IV. Packaging and Thermal Management: The objective of this task is to develop and implement affordable packages/enclosures for WBG MMICs or combinations of MMICs. Activities should lead to designs and hardware that result in the ability of WBG MMICs to achieve their full performance, reliability, and environmental capabilities, minimize labor intensive assembly operations, and which are suitable for production at high rates. For each Track, a Proposer is strongly encouraged to address all of the Technical Areas of Interest. To best achieve this, offerors are also strongly encouraged to form teams with the requisite skills and capabilities.Additional information on these technology areas is provided in the Areas of Interest section of the BAA 04-19 Proposer Information Pamphlet referenced below.PROGRAM SCOPEAwards totaling approximately $75 to $110 million over four years are expected to be made during the first half of calendar year 2005. Multiple awards are anticipated. Collaborative efforts/teaming are encouraged. A web site has been established -- http://teams.davincinetbook.com/ -- to facilitate formation of teaming arrangements between interested parties. Specific content, communications, networking, and team formation are the sole responsibility of the participants. Neither DARPA nor the Department of Defense (DoD) endorses the destination web site or the information and organizations contained therein, nor does DARPA or the DoD exercise any responsibility at the destination. This web site is provided consistent with the stated purpose of this BAA. Cost sharing is not required and is not an evaluation criterion but is encouraged where there is a reasonable probability of a potential commercial application related to the proposed research and development effort. The technical POC for this effort is Mark Rosker, fax: (703) 696-2206, electronic mail: mrosker@darpa.mil. GENERAL INFORMATIONProposers must obtain a pamphlet entitled ?BAA 04-19, Wide Band Gap Semiconductors for RF Applications (WBGS-RF), Proposer Information Pamphlet?, which provides further information on areas of interest, the submission, evaluation, and funding processes, proposal abstract formats, proposal formats, and other general information. This pamphlet may be obtained from the FedBizOpps website: http://www.fedbizopps.gov/, World Wide Web (WWW) at URL http://www.darpa.mil/ or by fax, electronic mail, or mail request to the administrative contact address given below. Proposals not meeting the format described in the pamphlet may not be reviewed. In order to minimize unnecessary effort in proposal preparation and review, proposers are strongly encouraged to submit proposal abstracts in advance of full proposals. Two electronic copies (i.e. two separate disks) of the proposal abstract (in PDF -preferred, MS-Word readable, or HTML format each on a single 3.5 inch High Density MS-DOS formatted 1.44 Megabyte (MB) diskette, a single 100 MB Iomega Zip (registered) disk, or a CD-ROM) should be submitted. Each disk must be clearly labeled with BAA 04-19, proposer organization, proposal title (short title recommended) and Copy __ of 2. The proposal abstract (designated number of electronic copies) must be submitted to DARPA/MTO, 3701 North Fairfax Drive, Arlington, VA 22203-1714 (Attn.: BAA 04-19) on or before 4:00 p.m., local time, Tuesday, June 1, 2004. Proposal abstracts received after this time and date may not be reviewed. Upon review, DARPA will provide written feedback on the likelihood of a full proposal being selected and the time and date for submission of a full proposal. Proposers not submitting proposal abstracts must submit an original and nine (9) copies of the full proposal and two electronic copies (i.e. two separate disks) of the abstract (in PDF -preferred, MS-Word readable, or HTML format each on a single 3.5 inch High Density MS-DOS formatted 1.44 Megabyte (MB) diskette, a single 100 MB Iomega Zip (registered) disk, or a CD-ROM) should be submitted. Each disk must be clearly labeled with BAA 04-19, proposer organization, proposal title (short title recommended) and Copy __ of 2. The full proposal (original and designated number of hard and electronic copies) must be submitted to DARPA/MTO, 3701 North Fairfax Drive, Arlington, VA 22203-1714 (Attn.: BAA 04-19) on or before 4:00 p.m., local time, Tuesday, July 27, 2004, in order to be considered during the initial round of selections; however, proposals received after this deadline may be received and evaluated up to one year from date of posting on FedBizOpps. Full proposals submitted after the due date specified in the BAA or due date otherwise specified by DARPA after review of proposal abstracts may be selected contingent upon the availability of funds. This notice, in conjunction with the BAA 04-19 Proposer Information Pamphlet, constitutes the total BAA. No additional information is available, nor will a formal RFP or other solicitation regarding this announcement be issued. Requests for the same will be disregarded. The Government reserves the right to select for award all, some, or none of the proposals received, and to make awards without discussions. All responsible sources capable of satisfying the Government's needs may submit a proposal, which shall be considered by DARPA. Input on technical aspects of the proposals may be solicited by DARPA from non-Government consultants/experts who are bound by appropriate non-disclosure requirements. Non-Government technical consultants/experts will not have access to proposals that are labeled by their offerors as ?Government Only?. Historically Black Colleges and Universities (HBCUs) and Minority Institutions (MIs) are encouraged to submit proposals and join others in submitting proposals; however, no portion of this BAA will be set aside for HBCU and MI participation due to the impracticality of reserving discrete or severable areas of research in Wide Bandgap Semiconductors. All administrative correspondence and questions regarding this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to one of the administrative addresses below; e-mail or fax is preferred. DARPA intends to use electronic mail and fax for correspondence regarding BAA 04-19. Proposals and proposal abstracts may not be submitted by fax or e-mail; any so sent will be disregarded. DARPA encourages use of the WWW for retrieving the Proposer Information Pamphlet and any other related information that may subsequently be provided.EVALUATION CRITERIAEvaluation of proposal abstracts and full proposals will be accomplished through a technical review of each proposal using the following criteria, which are listed in descending order of relative importance: (l) overall scientific and technical merit, (2) potential contribution and relevance to DARPA mission, (3) plans and capability to accomplish technology transition, (4) offeror's capabilities and related experience, and (5) cost realism. Note: cost realism will only be significant in proposals which have significantly under- or over-estimated the cost to complete their effort. The administrative addresses for this BAA are:Fax: (703) 351-8616 (Addressed to: DARPA/MTO, BAA 04-19), Electronic Mail: BAA 04-19@darpa.milMail: DARPA/MTO, ATTN: BAA 04-19 3701 North Fairfax Drive Arlington, VA 22203-1714 This announcement and the Proposer Information Pamphlet may be retrieved via the WWW at URL http://www.darpa.mil/ in the solicitations area.
Federal Grant Title: Wide Band Gap Semiconductors for RF Applications (WBGS-RF)
Federal Agency Name: Defense Advanced Research Projects Agency
Grant Categories: Science and Technology
Type of Opportunity: Discretionary
Funding Opportunity Number: BAA-04-19
Type of Funding: Cooperative Agreement Grant Other Procurement Contract
CFDA Numbers: 12.910
CFDA Descriptions: Research and Technology Development
Current Application Deadline: No deadline provided
Original Application Deadline: Jul 27, 2004
Posted Date: Apr 22, 2004
Creation Date: Aug 09, 2006
Archive Date: Aug 10, 2006
Total Program Funding:
Maximum Federal Grant Award:
Minimum Federal Grant Award:
Expected Number of Awards:
Cost Sharing or Matching: No
Applicants Eligible for this Grant
Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled "Additional Information on Eligibility"
Link to Full Grant Announcement
Wide Band Gap Semiconductors for RF Applications (WBGS-RF)
http://www.darpa.mil/baa/
Grant Announcement Contact
Ulrey, Scott, Director, Technology Division, Phone 703 696-2434, Fax 703-812-3316, Email sulrey@darpa.mil sulrey@darpa.mil Ulrey, Scott
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