GaN on SiC Advanced EW MMIC Production Capacity Project

The summary for the GaN on SiC Advanced EW MMIC Production Capacity Project grant is detailed below. This summary states who is eligible for the grant, how much grant money will be awarded, current and past deadlines, Catalog of Federal Domestic Assistance (CFDA) numbers, and a sampling of similar government grants. Verify the accuracy of the data FederalGrants.com provides by visiting the webpage noted in the Link to Full Announcement section or by contacting the appropriate person listed as the Grant Announcement Contact. If any section is incomplete, please visit the website for the Air Force Research Lab, which is the U.S. government agency offering this grant.

GaN on SiC Advanced EW MMIC Production Capacity Project: The DPA Title III gallium nitride (GaN) on silicon carbide (SiC) Advanced EW monolithic microwave integrated circuit (MMIC) Production Capability Project will establish a domestic, economically viable, open-foundry merchant supplier production capability for high frequency, wide bandwidth (32 - 38 GHz), MMICs employing GaN epitaxy on 100mm SiC substrates. An open-foundry merchant supplier is one whose business model makes its production capabilities available for use by external companies to fabricate chips to their own specifications. It is evidenced by the presence of a process design kit (PDK) that captures the design rules and processes in a manner that allows external users to design chips that meet their needs in a small number (preferable first pass) of design iterations.